document number: 94348 for technical questions within your region, please contact one of the following: www.vishay.com revision: 20-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 input rectifier diode, 80 a vs-80EPS16pbf high voltage series vishay semiconductors description/features the vs-80EPS16pbf rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 150 c junction temperature. typical applications are in input rectification and these products are designed to be used with vishay semiconductors switches and output rectifiers which are available in identical package outlines. this product has been designed and qualified for industrial level. ? compliant to rohs directive 2002/95/ec product summary v f at 80 a 1.17 v i fsm 1450 a v rrm 1600 v to-247ac anode 1 3 base cathode anode 4, 2 major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 80 a v rrm 1600 v i fsm 1450 a v f 80 a, t j = 25 c 1.17 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-80EPS16pbf 1600 1700 1 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 100 c, 180 conduction half sine wave 80 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 1450 10 ms sine pulse, no voltage reapplied 1500 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 10 500 a 2 s 10 ms sine pulse, no voltage reapplied 11 250 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 105 000 a 2 ? s
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94348 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-80EPS16pbf high voltage series vishay semiconductors input rectifier diode, 80 a fig. 1 - current rating characteristics fig. 2 - current rating characteristics electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 80 a, t j = 25 c 1.17 v forward slope resistance r t t j = 150 c 3.17 m ? threshold voltage v f(to) 0.73 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 1.0 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.35 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac (jedec) 80EPS16 90 80 140 150 130 120 110 100 maximum allowable case temperature (c) average forward current (a) 20 10 30 40 80 90 50 60 70 0 30 60 90 120 180 80eps.. series r thjc (dc) = 0.35 k/w conduction angle ? 90 140 150 130 120 110 100 maximum allowable case temperature (c) average forward current (a) 20 40 120 140 60 80 100 0 dc 30 60 90 120 180 80eps.. series r thjc (dc) = 0.35 k/w ? conduction period
document number: 94348 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-80EPS16pbf high voltage series input rectifier diode, 80 a vishay semiconductors fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - forward voltage drop characteristics 0 80 60 40 20 100 120 maximum average forward power loss (w) average forward current (a) 20 10 30 40 80 90 50 60 70 0 rms limit 180 120 90 60 30 80eps.. series t j = 150 c conduction angle ? 0 80 60 40 20 120 140 160 100 maximum average forward power loss (w) average forward current (a) 20 40 60 140 80 100 120 0 dc 180 120 90 60 30 rms limit 80eps.. series t j = 150 c ? conduction period 800 600 400 1600 1400 1200 1000 peal half sine wave forward current (a) number of equal amplitude half cycle current pulse (n) 10 100 1 80eps.. series at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 800 600 400 1800 1600 1400 1200 1000 peak half sine wave forward current (a) pulse train duration (s) 0.1 1 0.01 80eps.. series maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied 1 10 100 1000 instantaneous forward current (a) instantaneous forward characteristics 1.0 0.5 1.5 2.0 4.0 2.5 3.0 3.5 0 t j = 25 c t j = 150 c 80eps.. series
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94348 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-80EPS16pbf high voltage series vishay semiconductors input rectifier diode, 80 a fig. 8 - thermal impedance z thjc characteristics ordering information table 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 10 steady state value (dc operation) single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 80eps.. series links to related documents dimensions www.vishay.com/doc?95223 part marking information www.vishay.com/doc?95226 1 - current rating (80 = 80 a) - vishay semiconductors product 5 - voltage rating (16 = 1600 v) 6 7 - none = standard production pbf = lead (pb)-free 2 - circuit configuration: e = single diode 3 - package: p = to-247ac 4 - type of silicon: s = standard recovery rectifier device code 5 1 3 2 4 6 7 80 vs- e p s 16 pbf
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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